Study of carrier trapping in stacked dielectrics
Polysilicon/silicon-nitride/thermal-oxide/n-Si (SNOS) and polysilicon/oxide/silicon-nitride/thermal,oxide/n-Si (SONOS) capacitors were fabricated with various nitride thicknesses. It is shown that formation of an oxide layer on the nitride (NOX) reduces current conduction by more than two orders of...
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| Veröffentlicht in: | IEEE electron device letters 1986-08, Vol.7 (8), p.486-489 |
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| container_end_page | 489 |
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| container_title | IEEE electron device letters |
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| creator | Nozaki, S. Giridhar, R.V. |
| description | Polysilicon/silicon-nitride/thermal-oxide/n-Si (SNOS) and polysilicon/oxide/silicon-nitride/thermal,oxide/n-Si (SONOS) capacitors were fabricated with various nitride thicknesses. It is shown that formation of an oxide layer on the nitride (NOX) reduces current conduction by more than two orders of magnitude at higher fields. Studies of the flat-band voltage shift with injected carrier fluence show opposite flat-band voltage shifts for SNOS (negative) and for SONOS (positive), under positive gate stress. NOX apparently acts as a hole injection barrier. |
| doi_str_mv | 10.1109/EDL.1986.26448 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_24286548</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1486271</ieee_id><sourcerecordid>28668077</sourcerecordid><originalsourceid>FETCH-LOGICAL-c348t-d8316408a0e134aa73ff29ba6d74170b81f8c3bc9130b88f7a78cedd2f0622d13</originalsourceid><addsrcrecordid>eNqFkDtPwzAUhS0EEqWwsrBkQGwJ14_YNyMq5SFVYgBmy_UDGdKk2OnAvyelFYxMV0f6ztHVR8g5hYpSaK7nt4uKNigrJoXAAzKhdY0l1JIfkgkoQUtOQR6Tk5zfAagQSkwIPA8b91X0obAmpehTMSSzXsfurYhdkQdjP7wrXPStt0OKNp-So2Da7M_2d0pe7-Yvs4dy8XT_OLtZlJYLHEqHnEoBaMBTLoxRPATWLI104yMKlkgDWr60DeVjwKCMQuudYwEkY47yKbna7a5T_7nxedCrmK1vW9P5fpM1QykRlPofFCNaCxzBagfa1OecfNDrFFcmfWkKemtQjwb11qD-MTgWLvfLJlvThmQ6G_NvCxEQORuxix0Wvfd_mwIlU5R_A4grd7o</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24286548</pqid></control><display><type>article</type><title>Study of carrier trapping in stacked dielectrics</title><source>IEEE Electronic Library (IEL)</source><creator>Nozaki, S. ; Giridhar, R.V.</creator><creatorcontrib>Nozaki, S. ; Giridhar, R.V.</creatorcontrib><description>Polysilicon/silicon-nitride/thermal-oxide/n-Si (SNOS) and polysilicon/oxide/silicon-nitride/thermal,oxide/n-Si (SONOS) capacitors were fabricated with various nitride thicknesses. It is shown that formation of an oxide layer on the nitride (NOX) reduces current conduction by more than two orders of magnitude at higher fields. Studies of the flat-band voltage shift with injected carrier fluence show opposite flat-band voltage shifts for SNOS (negative) and for SONOS (positive), under positive gate stress. NOX apparently acts as a hole injection barrier.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/EDL.1986.26448</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitors ; Dielectric measurements ; Dielectric substrates ; Electric variables measurement ; Electronics ; Exact sciences and technology ; Interfaces ; Oxidation ; Plasma measurements ; Pollution measurement ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; SONOS devices ; Voltage</subject><ispartof>IEEE electron device letters, 1986-08, Vol.7 (8), p.486-489</ispartof><rights>1986 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c348t-d8316408a0e134aa73ff29ba6d74170b81f8c3bc9130b88f7a78cedd2f0622d13</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1486271$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27922,27923,54756</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1486271$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8808832$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Nozaki, S.</creatorcontrib><creatorcontrib>Giridhar, R.V.</creatorcontrib><title>Study of carrier trapping in stacked dielectrics</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Polysilicon/silicon-nitride/thermal-oxide/n-Si (SNOS) and polysilicon/oxide/silicon-nitride/thermal,oxide/n-Si (SONOS) capacitors were fabricated with various nitride thicknesses. It is shown that formation of an oxide layer on the nitride (NOX) reduces current conduction by more than two orders of magnitude at higher fields. Studies of the flat-band voltage shift with injected carrier fluence show opposite flat-band voltage shifts for SNOS (negative) and for SONOS (positive), under positive gate stress. NOX apparently acts as a hole injection barrier.</description><subject>Applied sciences</subject><subject>Capacitors</subject><subject>Dielectric measurements</subject><subject>Dielectric substrates</subject><subject>Electric variables measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Interfaces</subject><subject>Oxidation</subject><subject>Plasma measurements</subject><subject>Pollution measurement</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>SONOS devices</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNqFkDtPwzAUhS0EEqWwsrBkQGwJ14_YNyMq5SFVYgBmy_UDGdKk2OnAvyelFYxMV0f6ztHVR8g5hYpSaK7nt4uKNigrJoXAAzKhdY0l1JIfkgkoQUtOQR6Tk5zfAagQSkwIPA8b91X0obAmpehTMSSzXsfurYhdkQdjP7wrXPStt0OKNp-So2Da7M_2d0pe7-Yvs4dy8XT_OLtZlJYLHEqHnEoBaMBTLoxRPATWLI104yMKlkgDWr60DeVjwKCMQuudYwEkY47yKbna7a5T_7nxedCrmK1vW9P5fpM1QykRlPofFCNaCxzBagfa1OecfNDrFFcmfWkKemtQjwb11qD-MTgWLvfLJlvThmQ6G_NvCxEQORuxix0Wvfd_mwIlU5R_A4grd7o</recordid><startdate>19860801</startdate><enddate>19860801</enddate><creator>Nozaki, S.</creator><creator>Giridhar, R.V.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19860801</creationdate><title>Study of carrier trapping in stacked dielectrics</title><author>Nozaki, S. ; Giridhar, R.V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c348t-d8316408a0e134aa73ff29ba6d74170b81f8c3bc9130b88f7a78cedd2f0622d13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Applied sciences</topic><topic>Capacitors</topic><topic>Dielectric measurements</topic><topic>Dielectric substrates</topic><topic>Electric variables measurement</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Interfaces</topic><topic>Oxidation</topic><topic>Plasma measurements</topic><topic>Pollution measurement</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>SONOS devices</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nozaki, S.</creatorcontrib><creatorcontrib>Giridhar, R.V.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nozaki, S.</au><au>Giridhar, R.V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of carrier trapping in stacked dielectrics</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1986-08-01</date><risdate>1986</risdate><volume>7</volume><issue>8</issue><spage>486</spage><epage>489</epage><pages>486-489</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Polysilicon/silicon-nitride/thermal-oxide/n-Si (SNOS) and polysilicon/oxide/silicon-nitride/thermal,oxide/n-Si (SONOS) capacitors were fabricated with various nitride thicknesses. It is shown that formation of an oxide layer on the nitride (NOX) reduces current conduction by more than two orders of magnitude at higher fields. Studies of the flat-band voltage shift with injected carrier fluence show opposite flat-band voltage shifts for SNOS (negative) and for SONOS (positive), under positive gate stress. NOX apparently acts as a hole injection barrier.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/EDL.1986.26448</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1986-08, Vol.7 (8), p.486-489 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24286548 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitors Dielectric measurements Dielectric substrates Electric variables measurement Electronics Exact sciences and technology Interfaces Oxidation Plasma measurements Pollution measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon SONOS devices Voltage |
| title | Study of carrier trapping in stacked dielectrics |
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