Study of carrier trapping in stacked dielectrics

Study of carrier trapping in stacked dielectrics

Polysilicon/silicon-nitride/thermal-oxide/n-Si (SNOS) and polysilicon/oxide/silicon-nitride/thermal,oxide/n-Si (SONOS) capacitors were fabricated with various nitride thicknesses. It is shown that formation of an oxide layer on the nitride (NOX) reduces current conduction by more than two orders of...

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Veröffentlicht in:IEEE electron device letters 1986-08, Vol.7 (8), p.486-489
Hauptverfasser: Nozaki, S., Giridhar, R.V.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Capacitors
Dielectric measurements
Dielectric substrates
Electric variables measurement
Electronics
Exact sciences and technology
Interfaces
Oxidation
Plasma measurements
Pollution measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
SONOS devices
Voltage
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Zusammenfassung:Polysilicon/silicon-nitride/thermal-oxide/n-Si (SNOS) and polysilicon/oxide/silicon-nitride/thermal,oxide/n-Si (SONOS) capacitors were fabricated with various nitride thicknesses. It is shown that formation of an oxide layer on the nitride (NOX) reduces current conduction by more than two orders of magnitude at higher fields. Studies of the flat-band voltage shift with injected carrier fluence show opposite flat-band voltage shifts for SNOS (negative) and for SONOS (positive), under positive gate stress. NOX apparently acts as a hole injection barrier.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26448