Unidirectional growth of silicon layers on a graphitized fabric substrate

A new technique is described for growing sheet silicon on a graphitized fabric substrate directly from the melt, enabling spatial separation of the growth meniscus from the main molten bulk. The silicon sheets grown by this process are suitable for the fabrication of solar cells.

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Bibliographische Detailangaben
Veröffentlicht in:	Materials letters 1984-03, Vol.2 (4), p.274-277
Hauptverfasser:	Brantov, S.K., Epelbaum, B.M., Tatarchenko, V.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A new technique is described for growing sheet silicon on a graphitized fabric substrate directly from the melt, enabling spatial separation of the growth meniscus from the main molten bulk. The silicon sheets grown by this process are suitable for the fabrication of solar cells.
ISSN:	0167-577X 1873-4979
DOI:	10.1016/0167-577X(84)90129-0