AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

AlGaAs double-heterostructure diode lasers have been fabricated for the first time on a monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of GaAs and AlGaAs layers on a Ge-coated Si wafer. For pulsed operation at 77 K the lowest threshold current was 260 mA, the hi...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1984-08, Vol.45 (4), p.309-311
Hauptverfasser:	WINDHORN, T. H, METZE, G. M, TSAUR, B.-Y, FAN, J. C. C
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CURRENTS EFFICIENCY ELECTRIC CURRENTS ELEMENTS ENGINEERING Exact sciences and technology FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS GERMANIUM ARSENIDES GERMANIUM COMPOUNDS HETEROJUNCTIONS JUNCTIONS LASERS OPERATION Optics Physics PNICTIDES POWER QUANTUM EFFICIENCY SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SEMIMETALS 420300 > Engineering-- Lasers-- (-1989) SILICON THRESHOLD CURRENT
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Zusammenfassung:	AlGaAs double-heterostructure diode lasers have been fabricated for the first time on a monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of GaAs and AlGaAs layers on a Ge-coated Si wafer. For pulsed operation at 77 K the lowest threshold current was 260 mA, the highest power output was 1.8 mW per facet, and the highest differential quantum efficiency was 1.2%.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.95273