Electrical Resistivities of Monocrystalline and Polycrystalline TiB2

Electrical Resistivities of Monocrystalline and Polycrystalline TiB2

The electrical resistivity of monocrystalline and polycrystalline TiB2, was measured under an inert atmosphere by a four‐point ac impedance technique over the range 298 to 1373 K. The results are expressed in the form ρ‐ρ298=m(T‐298). The following values of ρ298 (μω.cm) and m(nω.cm‐K‐1) were determ...

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Veröffentlicht in:Journal of the American Ceramic Society 1984-11, Vol.67 (11), p.705-708
Hauptverfasser: McLEOD, A. D., HAGGERTY, J. S., SADOWAY, D. R.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
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Zusammenfassung:The electrical resistivity of monocrystalline and polycrystalline TiB2, was measured under an inert atmosphere by a four‐point ac impedance technique over the range 298 to 1373 K. The results are expressed in the form ρ‐ρ298=m(T‐298). The following values of ρ298 (μω.cm) and m(nω.cm‐K‐1) were determined: for polycrystalline TiB2 (69% dense) 18.2 and 95; for polycrystalline TiB2 (99% dense) 7.4 and 42; and for monocrystalline TiB2, 6.6 and 34.9.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1984.tb19505.x