Shallow p-type layers in InP by Hg implantation

Ion implantation of mercury in n-type and semi-insulating indium phosphide is reported in InP. We show how mercury behaves in InP in terms of type of dopant, electrical activity, and diffusivity. Implanted mercury impurity behaves as an acceptor dopant in InP. Thin p-type layers have been obtained....

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Veröffentlicht in:	Applied physics letters 1986-01, Vol.48 (2), p.154-156
Hauptverfasser:	FAVENNEC, P. N, L'HARIDON, H, ROQUAIS, J. M, SALVI, M, LE CLEACH, X, GOUSKOV, L
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
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Beschreibung
Zusammenfassung:	Ion implantation of mercury in n-type and semi-insulating indium phosphide is reported in InP. We show how mercury behaves in InP in terms of type of dopant, electrical activity, and diffusivity. Implanted mercury impurity behaves as an acceptor dopant in InP. Thin p-type layers have been obtained. Mercury profiles and electrical profiles show that mercury does not diffuse towards the bulk during annealing; therefore, mercury implantation can be a valuable technique in realizing shallow p-type layers in indium phosphide.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.96981