Hole traps in p-type electrochemically deposited CdTe thin films

Deep level transient spectroscopy and photoluminescence measurements were performed for the first time on electrodeposited n-CdS/p-CdTe thin film solar cells. The observed levels were hole traps located at 0.2, 0.35, and 0.54 eV above the valence band. The nature of these hole traps can be attribute...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1984-02, Vol.55 (4), p.1020-1022
Hauptverfasser:	OU, S. S, BINDAL, A, STAFSUDD, O. M, WANG, K. L, BASOL, B. M
Format:	Artikel
Sprache:	eng
Schlagworte:	140501 - Solar Energy Conversion- Photovoltaic Conversion CADMIUM COMPOUNDS CADMIUM SULFIDE SOLAR CELLS CADMIUM TELLURIDE SOLAR CELLS CADMIUM TELLURIDES CHALCOGENIDES Condensed matter: electronic structure, electrical, magnetic, and optical properties CRYSTAL DEFECTS CRYSTAL STRUCTURE DEEP LEVEL TRANSIENT SPECTROSCOPY DIMENSIONS DIRECT ENERGY CONVERTERS Electron states Exact sciences and technology FABRICATION HEAT TREATMENTS HETEROJUNCTIONS HOLES Impurity and defect levels JUNCTIONS LOW TEMPERATURE LUMINESCENCE P-N JUNCTIONS PHOTOELECTRIC CELLS PHOTOLUMINESCENCE PHOTOVOLTAIC CELLS Physics POINT DEFECTS SEMICONDUCTOR JUNCTIONS SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT SPECTROSCOPY TELLURIDES TELLURIUM COMPOUNDS THICKNESS TRAPS VACANCIES
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Zusammenfassung:	Deep level transient spectroscopy and photoluminescence measurements were performed for the first time on electrodeposited n-CdS/p-CdTe thin film solar cells. The observed levels were hole traps located at 0.2, 0.35, and 0.54 eV above the valence band. The nature of these hole traps can be attributed to the generation of Cd vacancies during the heat treatment step, which was used in device fabrication, to convert the as-deposited n-type films into p-type layers.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.333194