Growth of vanadium-doped semi-insulating GaAs by MOCVD

Growth of vanadium-doped semi-insulating GaAs by MOCVD

Semi-insulating GaAs layers have been grown by MOCVD by vanadium (V) doping with triethoxylvanadyl: VO(OC 2H 5) 3. The resulting resistivity was 10 8 Ω cm or more at room temperature. The maximum deep level concentration found was more than 10 18 cm -3 without surface roughening. Semi-insulating lay...

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Veröffentlicht in:Journal of crystal growth 1984-09, Vol.68 (1), p.39-43
Hauptverfasser: Akiyama, Masahiro, Kawarada, Yoshihiro, Kaminishi, Katsuzo
Format: Artikel
Sprache:eng
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Zusammenfassung:Semi-insulating GaAs layers have been grown by MOCVD by vanadium (V) doping with triethoxylvanadyl: VO(OC 2H 5) 3. The resulting resistivity was 10 8 Ω cm or more at room temperature. The maximum deep level concentration found was more than 10 18 cm -3 without surface roughening. Semi-insulating layers were obtained over a wide range of growth conditions and were obtained over a wide range of growth conditions and were relatively stable to high temperature treatment. Furthermore, this dopant did not show a memory effect.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(84)90394-4