Optically pumped mode-locked multiple quantum well laser

We report the first optically pumped mode-locked Al0.3Ga0.7As/GaAs multiple quantum well (MQW) laser in external cavity. The MQW structure with a total thickness of 5 μm was grown by molecular beam epitaxy on a Si-doped GaAs substrate and was synchronously pumped by a mode-locked Kr+ laser (82 MHz)...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1986-09, Vol.49 (10), p.549-551
Hauptverfasser:	VALK, B, SALOUR, M. M, MUNNS, G, MORKOC, H
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS Applied sciences ARSENIC COMPOUNDS ARSENIDES DATA ENERGY GAP ENGINEERING EPITAXY Exact sciences and technology EXPERIMENTAL DATA FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS INFORMATION LASER CAVITIES LASERS MOLECULAR BEAM EPITAXY NUMERICAL DATA OPTICAL PUMPING Optics Other techniques and industries Physics PNICTIDES POWER PUMPING SEMICONDUCTOR DEVICES 420300 > Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes
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