Optically pumped mode-locked multiple quantum well laser

Optically pumped mode-locked multiple quantum well laser

We report the first optically pumped mode-locked Al0.3Ga0.7As/GaAs multiple quantum well (MQW) laser in external cavity. The MQW structure with a total thickness of 5 μm was grown by molecular beam epitaxy on a Si-doped GaAs substrate and was synchronously pumped by a mode-locked Kr+ laser (82 MHz)...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1986-09, Vol.49 (10), p.549-551
Hauptverfasser: VALK, B, SALOUR, M. M, MUNNS, G, MORKOC, H
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
Applied sciences
ARSENIC COMPOUNDS
ARSENIDES
DATA
ENERGY GAP
ENGINEERING
EPITAXY
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
Fundamental areas of phenomenology (including applications)
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER CAVITIES
LASERS
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
OPTICAL PUMPING
Optics
Other techniques and industries
Physics
PNICTIDES
POWER
PUMPING
SEMICONDUCTOR DEVICES 420300 > Engineering-- Lasers-- (-1989)
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
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Beschreibung
Zusammenfassung:We report the first optically pumped mode-locked Al0.3Ga0.7As/GaAs multiple quantum well (MQW) laser in external cavity. The MQW structure with a total thickness of 5 μm was grown by molecular beam epitaxy on a Si-doped GaAs substrate and was synchronously pumped by a mode-locked Kr+ laser (82 MHz) at 647.1 nm. The MQW laser emitted 10 ps pulses at 8085 Å with peak powers as high as 6 W. The demonstrated MQW laser combines desirable properties of quantum wells with advantages of an external cavity, such as specific band-gap design with high beam quality and the possibility of intracavity tailoring of the laser beam.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97091