Field-effect studies on p -type CuInTe2 metal-insulator-semiconductor structures

Field effect studies on metal-insulator-semiconductor structures of p-CuInTe2 thin films grown on mica are made in the temperature range 77–295 K. An increase in carrier density and a decrease in the mobility is observed on the application of a negative gate field. The effect of a positive gate field is the opposite. The Hall coefficient is found to remain practically constant at a lower temperature range (77–180 K) and then decreases with a further rise of temperature. The study of the effective field effect mobility μFE reveals that the surface states charge scattering mechanism dominates the scattering process.