Processing for integrated optic sensors
The n values of ZnO films, sputter-deposited onto oxidized Si wafers, were 99.5 (ordinary index) and 99.8% (extraordinary index) of single-crystal values. A prototype of a mode coupler consisting of ZnO and SiO sub 2 films showed the feasibility of efficient electrooptic modulation in ZnO-based wave...
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Veröffentlicht in: | Thin solid films 1986-01, Vol.137 (2), p.185-192 |
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Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The n values of ZnO films, sputter-deposited onto oxidized Si wafers, were 99.5 (ordinary index) and 99.8% (extraordinary index) of single-crystal values. A prototype of a mode coupler consisting of ZnO and SiO sub 2 films showed the feasibility of efficient electrooptic modulation in ZnO-based waveguides. |
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ISSN: | 0040-6090 |