Processing for integrated optic sensors

The n values of ZnO films, sputter-deposited onto oxidized Si wafers, were 99.5 (ordinary index) and 99.8% (extraordinary index) of single-crystal values. A prototype of a mode coupler consisting of ZnO and SiO sub 2 films showed the feasibility of efficient electrooptic modulation in ZnO-based wave...

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Veröffentlicht in:Thin solid films 1986-01, Vol.137 (2), p.185-192
1. Verfasser: Horsthuis, W H G
Format: Artikel
Sprache:eng
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Zusammenfassung:The n values of ZnO films, sputter-deposited onto oxidized Si wafers, were 99.5 (ordinary index) and 99.8% (extraordinary index) of single-crystal values. A prototype of a mode coupler consisting of ZnO and SiO sub 2 films showed the feasibility of efficient electrooptic modulation in ZnO-based waveguides.
ISSN:0040-6090