Upper critical fields of superconducting Nb3Ge films

Upper critical fields of superconducting Nb3Ge films

The upper critical field Hc2 (4.2 K) of superconducting Nb3Ge films prepared by sputtering and chemical vapor deposition (CVD) has been measured in a pulsed field. The Hc2 of these films is generally related to their superconducting critical temperature Tc. Sputtered films exhibit a linear increase...

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Veröffentlicht in:Journal of applied physics 1986-02, Vol.59 (3), p.975-977
Hauptverfasser: SUZUKI, M, ANAYAMA, T, KIDO, G, NAKAGAWA, Y
Format: Artikel
Sprache:eng
Schlagworte:
Analysing. Testing. Standards
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Measurement of properties and materials state
Metals, semimetals and alloys
Metals. Metallurgy
Nondestructive testing
Physics
Properties of type I and type II superconductors
Specific materials
Superconductivity
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Zusammenfassung:The upper critical field Hc2 (4.2 K) of superconducting Nb3Ge films prepared by sputtering and chemical vapor deposition (CVD) has been measured in a pulsed field. The Hc2 of these films is generally related to their superconducting critical temperature Tc. Sputtered films exhibit a linear increase of Hc2 from 25.4 to 33.3 T for a Tc range 18.6–21.3 K. Although the data of CVD-prepared films are scattered due to nonuniformity in the films, a similar dependence of Hc2 on Tc has been found.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.336577