Effect of pressure on the height of the Schottky barrier (Φ) for several semiconductors

This paper contains the first measurements of the effect of pressure on the Schottky barrier (φB) at a metal-semiconductor interface. Results are presented for CdS, CdSe, and ZnO together with measurements of the absorption edges for CdSe and ZnO. These results are used in conjunction with previousl...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1984-12, Vol.56 (12), p.3471-3475
Hauptverfasser:	PEANASKY, M. J, DRICKAMER, H. G
Format:	Artikel
Sprache:	eng
Schlagworte:	360603 - Materials- Properties ABSORPTIVITY Applied sciences ARSENIC COMPOUNDS ARSENIDES CADMIUM COMPOUNDS CADMIUM SELENIDES CADMIUM SULFIDES CHALCOGENIDES Electronics ENERGY LEVELS Exact sciences and technology FERMI LEVEL FUNCTIONS GALLIUM ARSENIDES GALLIUM COMPOUNDS INDIUM COMPOUNDS INDIUM PHOSPHIDES INORGANIC PHOSPHORS INTERFACES MATERIALS SCIENCE OPTICAL PROPERTIES OXIDES OXYGEN COMPOUNDS PHOSPHIDES PHOSPHORS PHOSPHORUS COMPOUNDS PHYSICAL PROPERTIES PNICTIDES POTENTIALS PRESSURE EFFECTS SCHOTTKY BARRIER DIODES SELENIDES SELENIUM COMPOUNDS SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SULFIDES SULFUR COMPOUNDS VALENCE WORK FUNCTIONS ZINC COMPOUNDS ZINC OXIDES
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Beschreibung
Zusammenfassung:	This paper contains the first measurements of the effect of pressure on the Schottky barrier (φB) at a metal-semiconductor interface. Results are presented for CdS, CdSe, and ZnO together with measurements of the absorption edges for CdSe and ZnO. These results are used in conjunction with previously published flat-band potential measurements on GaAs and InP to relate the change in energy of the top of valence band Ev relative to the Fermi level of the metal to the ionicity of the semiconductor. These measurements are compared to correlations of the change of φB with work function of the metal which have previously appeared in the literature.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.333897