Application of a solution proximity annealing technique for fabrication of ion-implanted GaAs integrated circuits

A technique for capless annealing of ion-implanted GaAs, using an arsenic-saturated solution of Sn and Ga in close proximity to the wafer, has been applied to the fabrication of GaAs integrated circuits. The IC processing technology utilizes a self-aligned T-shaped refractory gate approach for the f...

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Veröffentlicht in:IEEE electron device letters 1986-01, Vol.7 (1), p.23-25
Hauptverfasser: Prince, F.C., Armiento, C.A.
Format: Artikel
Sprache:eng
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Zusammenfassung:A technique for capless annealing of ion-implanted GaAs, using an arsenic-saturated solution of Sn and Ga in close proximity to the wafer, has been applied to the fabrication of GaAs integrated circuits. The IC processing technology utilizes a self-aligned T-shaped refractory gate approach for the fabrication of both enhancement- and depletion-mode MESFET's. Using the solution proximity annealing technique, excellent threshold voltage uniformities (standard deviation = 26 mV) have been obtained for enhancement-mode devices using commercial substrates. This process technology has resulted in the fabrication of divide-by-16 circuits in both SDFL and DCFL logic implementations, as well as enhancement/depletion (E/D) ring oscillators (L g = 2 µm) with propagation delays as low as 45 ps/gate and concomitant power consumptions of 2 mW/gate. This technique can also be applied, by suitable choice of the solution constituents, to capless annealing of other III-V semiconductors such as InP and GaInAs.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26279