Phase-locked shallow mesa graded barrier quantum well laser arrays

Graded barrier quantum well heterostructures have been grown by metalorganic chemical vapor deposition and processed into real index-guided shallow mesa laser arrays. Single-stripe devices have threshold currents as low as 14 mA (533 μm length) and ten-element arrays have threshold currents as low a...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1986-05, Vol.48 (20), p.1337-1339
Hauptverfasser:	MAWST, L. J, GIVENS, M. E, EMANUEL, M. A, ZMUDZINSKI, C. A, COLEMAN, J. J
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES CHEMICAL COATING CHEMICAL VAPOR DEPOSITION CURRENTS DATA DEPOSITION EFFICIENCY ELECTRIC CURRENTS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS HETEROJUNCTIONS INFORMATION JUNCTIONS LASERS NUMERICAL DATA OPERATION Optics ORGANIC COMPOUNDS ORGANOMETALLIC COMPOUNDS PHASE SHIFT Physics PNICTIDES QUANTUM EFFICIENCY SEMICONDUCTOR DEVICES SEMICONDUCTOR JUNCTIONS SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SURFACE COATING 420300 > Engineering-- Lasers-- (-1989) THRESHOLD CURRENT
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Graded barrier quantum well heterostructures have been grown by metalorganic chemical vapor deposition and processed into real index-guided shallow mesa laser arrays. Single-stripe devices have threshold currents as low as 14 mA (533 μm length) and ten-element arrays have threshold currents as low as 9 mA per stripe with 52% differential quantum efficiency. These arrays operate phase locked with sharp double-lobed far-field patterns up to 1.75 times threshold current.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.96953