Drain bias dependence of the frequency limit of GaAs FET's

Drain bias dependence of the frequency limit of GaAs FET's

Microwave f T measurements were made and compared to a model that confirmed lateral spreading as proposed by Wemple et al. to explain the increased breakdown voltage of GaAs power FET's compared to bulk breakdown. The model provides a useful tool for device diagnosis as well as evaluation of th...

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Veröffentlicht in:IEEE transactions on electron devices 1984-08, Vol.31 (8), p.1068-1071
Hauptverfasser: Soong Hak Lee, Dawson, D.E., Dickens, L.E.
Format: Artikel
Sprache:eng
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Zusammenfassung:Microwave f T measurements were made and compared to a model that confirmed lateral spreading as proposed by Wemple et al. to explain the increased breakdown voltage of GaAs power FET's compared to bulk breakdown. The model provides a useful tool for device diagnosis as well as evaluation of the frequency limit f T .
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1984.21662