A new double heterostructure optoelectronic switching device using molecular beam epitaxy

Two-terminal switching action is observed in a new optoelectronic device structure. The device has a high-impedance state without light emission and a low-impedance state characterized by strong spontaneous emission. The transition from either state to the other may be induced by the appropriate optical or electrical input. It is clear that with the appropriate optical cavity construction the switching device will operate as a laser in the on state rather than in the spontaneous mode reported here. In principle, the device offers large digital optical gain determined by its optical sensitivity and its maximum output power.