Contact properties of tantalum-silicon films on n- and p-type InP

The contact properties of rf sputter-deposited Ta–Si thin films on nand to 750 °C. Rectifying behavior of the contact (φBn ∼0.4 eV) was observed on n-type InP only in the annealing temperature range between 400 and 500 °C. On p-type InP, a barrier height of ∼0.97 eV was observed after annealing up t...

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Veröffentlicht in:	Journal of applied physics 1984-04, Vol.55 (8), p.2986-2989
Hauptverfasser:	ZHANG, B, SCOTT, D. M, WIEDER, H. H, LAU, S. S, TSENG, W. F
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Zusammenfassung:	The contact properties of rf sputter-deposited Ta–Si thin films on nand to 750 °C. Rectifying behavior of the contact (φBn ∼0.4 eV) was observed on n-type InP only in the annealing temperature range between 400 and 500 °C. On p-type InP, a barrier height of ∼0.97 eV was observed after annealing up to 650 °C. The contact properties appear to be consistent with the defect-model of barrier formation on III-V semiconductors.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.333342