Nondestructive depth profiling of carrier lifetimes in full silicon wafers

We demonstrate for the first time that the phase shift associated with amplitude modulated, near band-edge photoluminescence from Si at room temperature can be used to map defects and carrier lifetimes over full wafers with depth sensitivity.

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Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1986-01, Vol.48 (1), p.68-70
Hauptverfasser:	GUIDOTTI, D, BATCHELDER, J. S, VAN VECHTEN, J. A, FINKEL, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	We demonstrate for the first time that the phase shift associated with amplitude modulated, near band-edge photoluminescence from Si at room temperature can be used to map defects and carrier lifetimes over full wafers with depth sensitivity.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.96764