Infrared absorption in PtSi-Si interface states

Photoacoustic absorption and transmission measurements are performed to detect the contribution of interface states at the PtSi-Si interface to the absorption of the metal film. PtSi films on silicon substrates in the thickness range 27–420 Å are employed. The results are interpreted by a multilayer...

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Veröffentlicht in:	Applied physics letters 1986-06, Vol.48 (22), p.1534-1535
Hauptverfasser:	FLOHR, T, SCHULZ, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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