Infrared absorption in PtSi-Si interface states

Infrared absorption in PtSi-Si interface states

Photoacoustic absorption and transmission measurements are performed to detect the contribution of interface states at the PtSi-Si interface to the absorption of the metal film. PtSi films on silicon substrates in the thickness range 27–420 Å are employed. The results are interpreted by a multilayer...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 1986-06, Vol.48 (22), p.1534-1535
Hauptverfasser: FLOHR, T, SCHULZ, M
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Photoacoustic absorption and transmission measurements are performed to detect the contribution of interface states at the PtSi-Si interface to the absorption of the metal film. PtSi films on silicon substrates in the thickness range 27–420 Å are employed. The results are interpreted by a multilayer optical model. Absorption in an interface layer representing interface states is about 10%.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96859