Metal contacts to semiconductors, indium phosphide and cadmium telluride
The Schottky barriers formed by a range of metals on InP(110) and CdTe(110) surfaces have been studied by a range of methods, concentrating in particular on Ga overlayers on InP, and Sb, Pd, Co, Cr and Fe on CdTe. Substantial differences are observed depending on whether the semiconductor surface is...
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| Veröffentlicht in: | Surface science 1986-03, Vol.168 (1), p.323-335 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The Schottky barriers formed by a range of metals on InP(110) and CdTe(110) surfaces have been studied by a range of methods, concentrating in particular on Ga overlayers on InP, and Sb, Pd, Co, Cr and Fe on CdTe. Substantial differences are observed depending on whether the semiconductor surface is chemically etched, cleaved in air, or cleaved in vacuum. These differences are largely consistent with previous studies and are discussed in terms of the various models available to describe Schottky barrier formation. |
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| ISSN: | 0039-6028 1879-2758 |
| DOI: | 10.1016/0039-6028(86)90862-9 |