Backscattering spectrometry of oxide films formed on aluminium in weakly alkaline solutions

The corrosion and passive behavior of high-purity Al in weakly alkaline solution (p H 7-10) has been studied by electrochemical measurements and by Auger electron spectroscopic investigations of oxide films formed. The films were found to be duplex ones, generally having a thin inner barrier layer (...

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Veröffentlicht in:Electrochimica acta 1984-01, Vol.29 (8), p.1161-1162
Hauptverfasser: Hurlen, T., Haug, A.T., Salomonsen, G.
Format: Artikel
Sprache:eng
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Zusammenfassung:The corrosion and passive behavior of high-purity Al in weakly alkaline solution (p H 7-10) has been studied by electrochemical measurements and by Auger electron spectroscopic investigations of oxide films formed. The films were found to be duplex ones, generally having a thin inner barrier layer (whose thickness decreases with increasing p H) and a thicker outer nonbarrier layer (whose thickness increases with increasing p H). Some supplementary studies on such films by backscattering spectrometry using a normally incident beam of 2 MeV helium ions and measuring at a scattering angle of 165 deg and with a channel width of 5 keV, are reported.--AA.
ISSN:0013-4686
1873-3859
DOI:10.1016/0013-4686(84)87170-4