Cation-Deficiency-Induced Crystal-Site Engineering for ZnGa2O4:Mn2+ Thin Film

Zn-deficient spinel-type ZnGa2O4:Mn2+ phosphor thin films were prepared using pulsed laser deposition. With an increase (decrease) in the Zn deficiency (concentration) of the films, changes in lattice constant, optical band gap, and photoluminescence spectra were observed. All films without γ-Ga2O3:Mn showed green luminescence attributable to the transition from the 4T1 state to the 6A1 state. In addition, the spectral shape changed depending on the temperature. The luminescence spectra have two peaks resulting from the Mn2+ ions located in the tetrahedral and octahedral sites. These peaks had different thermal quenching temperatures, which were around 320 and 260 K, respectively. Therefore, the spectral shape changed with increasing temperature. The spectral shape also depended on the Zn concentration. With an increase (decrease) in the Zn concentration (deficiency) of the films, the intensity of emission from Td increased in comparison with that from O h . Therefore, the position of Mn2+ was controlled by Zn deficiency similarly to the effect of crystal-site engineering.