Muon channeling in semiconductors: evidence for pionium formation

Muon channeling in semiconductors: evidence for pionium formation

Muon-channeling profiles resulting from the decay of positive pions implanted in high-purity Ge and GaAs single crystals with and without illumination have been measured. The change in profiles with illumination demonstrates that the pion decay site is sensitive to the concentration of excess charge...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Phys. Rev. Lett.; (United States) 1986-08, Vol.57 (5), p.563-566
Hauptverfasser: FLIK, G, BRADBURY, J. N, DANIEL, H, COOKE, D. W, HEFFNER, R. H, LEON, M, PACIOTTI, M. A, SCHILLACI, M. E, MAIER, K, REMPP, H, BOEKEMA, C
Format: Artikel
Sprache:eng
Schlagworte:
ARSENIC COMPOUNDS
ARSENIDES
BOSONS
CHANNELING
Channeling phenomena (blocking, energy loss, etc.)
Condensed matter: structure, mechanical and thermal properties
CRYSTALS
DECAY
ELEMENTARY PARTICLES
ELEMENTS
Exact sciences and technology
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
HADRONS
ION IMPLANTATION
LIGHT TRANSMISSION
MATERIALS SCIENCE
MESONS
METALS
MONOCRYSTALS
MUON PROBES
Physics
PIONIUM
PIONS
PIONS PLUS
PNICTIDES
PROBES
PSEUDOSCALAR MESONS 360602 > Other Materials-- Structure & Phase Studies
Structure of solids and liquids
crystallography
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Muon-channeling profiles resulting from the decay of positive pions implanted in high-purity Ge and GaAs single crystals with and without illumination have been measured. The change in profiles with illumination demonstrates that the pion decay site is sensitive to the concentration of excess charge carriers produced by photon absorption. This site change is explained in terms of different electronic states of the pion, i.e., bare pi(+) and pionium. (Author)
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.57.563