Al-Ge ohmic contacts to n-type GaAs
Ohmic contacts have been fabricated to n-type GaAs with an alloy of AL-Ge which has an eutectic temperature of 424°C with 53- weight percent Germanium. The lowest contact resistance of 1.4 × 10 -6 Ω.cm 2 was measured with a transfer length transmission line structure. The application to GaAs integra...
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| Veröffentlicht in: | IEEE electron device letters 1986-11, Vol.7 (11), p.603-604 |
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| container_end_page | 604 |
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| container_issue | 11 |
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| container_title | IEEE electron device letters |
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| creator | Zuleeg, R. Friebertshauser, P.E. Stephens, J.M. Watanabe, S.H. |
| description | Ohmic contacts have been fabricated to n-type GaAs with an alloy of AL-Ge which has an eutectic temperature of 424°C with 53- weight percent Germanium. The lowest contact resistance of 1.4 × 10 -6 Ω.cm 2 was measured with a transfer length transmission line structure. The application to GaAs integrated-circuit design is demonstrated. |
| doi_str_mv | 10.1109/EDL.1986.26488 |
| format | Article |
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The lowest contact resistance of 1.4 × 10 -6 Ω.cm 2 was measured with a transfer length transmission line structure. The application to GaAs integrated-circuit design is demonstrated.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/EDL.1986.26488</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Alloying ; Applied sciences ; Contact resistance ; Electrical resistance measurement ; Electronics ; Exact sciences and technology ; Gallium arsenide ; Germanium alloys ; Gold ; Integrated circuit interconnections ; Interfaces ; Nickel alloys ; Ohmic contacts ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The lowest contact resistance of 1.4 × 10 -6 Ω.cm 2 was measured with a transfer length transmission line structure. The application to GaAs integrated-circuit design is demonstrated.</description><subject>Alloying</subject><subject>Applied sciences</subject><subject>Contact resistance</subject><subject>Electrical resistance measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Germanium alloys</subject><subject>Gold</subject><subject>Integrated circuit interconnections</subject><subject>Interfaces</subject><subject>Nickel alloys</subject><subject>Ohmic contacts</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNqNkL1PwzAQRy0EEqWwsrBEArEl3PnbY1VKQarEArPlmIsISpsSp0P_e1JawQjTLe_3pHuMXSIUiODuZveLAp3VBdfS2iM2QqVsDkqLYzYCIzEXCPqUnaX0AYBSGjli15Mmn1PWvi_rmMV21YfYp6xvs1Xeb9eUzcMknbOTKjSJLg53zF4fZi_Tx3zxPH-aThZ5FMb1eUUAQjrN4a20yqloOGnDASsDkUpXlohlKUlLEXRQkiyBLTmXtuLRWSXG7HbvXXft54ZS75d1itQ0YUXtJnluzfAewj9AgVYr-TcowVoJbgCLPRi7NqWOKr_u6mXoth7B7-r6oa7f1fXfdYfBzcEcUgxN1YVVrNPPyjglAPSAXe2xmoh-ndJqgSi-ADrJfpk</recordid><startdate>19861101</startdate><enddate>19861101</enddate><creator>Zuleeg, R.</creator><creator>Friebertshauser, P.E.</creator><creator>Stephens, J.M.</creator><creator>Watanabe, S.H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope><scope>7QF</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>19861101</creationdate><title>Al-Ge ohmic contacts to n-type GaAs</title><author>Zuleeg, R. ; Friebertshauser, P.E. ; Stephens, J.M. ; Watanabe, S.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c379t-fe00349620db8595c72e67201f70ceb9bb11bb4e643a6a54e8e08b2248f2c9853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Alloying</topic><topic>Applied sciences</topic><topic>Contact resistance</topic><topic>Electrical resistance measurement</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Germanium alloys</topic><topic>Gold</topic><topic>Integrated circuit interconnections</topic><topic>Interfaces</topic><topic>Nickel alloys</topic><topic>Ohmic contacts</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zuleeg, R.</creatorcontrib><creatorcontrib>Friebertshauser, P.E.</creatorcontrib><creatorcontrib>Stephens, J.M.</creatorcontrib><creatorcontrib>Watanabe, S.H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><collection>Aluminium Industry Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zuleeg, R.</au><au>Friebertshauser, P.E.</au><au>Stephens, J.M.</au><au>Watanabe, S.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Al-Ge ohmic contacts to n-type GaAs</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1986-11-01</date><risdate>1986</risdate><volume>7</volume><issue>11</issue><spage>603</spage><epage>604</epage><pages>603-604</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Ohmic contacts have been fabricated to n-type GaAs with an alloy of AL-Ge which has an eutectic temperature of 424°C with 53- weight percent Germanium. The lowest contact resistance of 1.4 × 10 -6 Ω.cm 2 was measured with a transfer length transmission line structure. The application to GaAs integrated-circuit design is demonstrated.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/EDL.1986.26488</doi><tpages>2</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1986-11, Vol.7 (11), p.603-604 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24088409 |
| source | IEEE Electronic Library (IEL) |
| subjects | Alloying Applied sciences Contact resistance Electrical resistance measurement Electronics Exact sciences and technology Gallium arsenide Germanium alloys Gold Integrated circuit interconnections Interfaces Nickel alloys Ohmic contacts Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature |
| title | Al-Ge ohmic contacts to n-type GaAs |
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