Al-Ge ohmic contacts to n-type GaAs

Ohmic contacts have been fabricated to n-type GaAs with an alloy of AL-Ge which has an eutectic temperature of 424°C with 53- weight percent Germanium. The lowest contact resistance of 1.4 × 10 -6 Ω.cm 2 was measured with a transfer length transmission line structure. The application to GaAs integra...

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Veröffentlicht in:	IEEE electron device letters 1986-11, Vol.7 (11), p.603-604
Hauptverfasser:	Zuleeg, R., Friebertshauser, P.E., Stephens, J.M., Watanabe, S.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloying Applied sciences Contact resistance Electrical resistance measurement Electronics Exact sciences and technology Gallium arsenide Germanium alloys Gold Integrated circuit interconnections Interfaces Nickel alloys Ohmic contacts Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature
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Beschreibung
Zusammenfassung:	Ohmic contacts have been fabricated to n-type GaAs with an alloy of AL-Ge which has an eutectic temperature of 424°C with 53- weight percent Germanium. The lowest contact resistance of 1.4 × 10 -6 Ω.cm 2 was measured with a transfer length transmission line structure. The application to GaAs integrated-circuit design is demonstrated.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/EDL.1986.26488