Electromigration failure in filaments through Langmuir-Blodgett films

Electrical conduction through the Langmuir-Blodgett (LB) film in a metal/LB/metal structure has been studied. LB films of up to 40 layers in thickness have been shown to be shorted by metal filaments through the LB film. A switching effect has been observed when, by the application of a voltage puls...

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Veröffentlicht in:	Solid state communications 1986-07, Vol.59 (1), p.7-9
Hauptverfasser:	Couch, N.R., Movaghar, B., Girling, I.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology High-field and nonlinear effects Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Electrical conduction through the Langmuir-Blodgett (LB) film in a metal/LB/metal structure has been studied. LB films of up to 40 layers in thickness have been shown to be shorted by metal filaments through the LB film. A switching effect has been observed when, by the application of a voltage pulse, the conduction through the filaments may be turned on or off. The present work examines the mechanism by which conducting paths are destroyed and reformed. DC measurements indicate this switching may be initiated by electromigration.
ISSN:	0038-1098 1879-2766
DOI:	10.1016/S0038-1098(86)80003-5