High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows

Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were obt...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1986-12, Vol.49 (23), p.1572-1574
Hauptverfasser:	THORNTON, R. L, WELCH, D. F, BURNHAM, R. D, PAOLI, T. L, CROSS, P. S
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES COATINGS DATA DESIGN EFFICIENCY ELEMENTS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS IMPURITIES INFORMATION LASERS NUMERICAL DATA OPENINGS Optics Physics PNICTIDES POWER SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SEMIMETALS 420300 > Engineering-- Lasers-- (-1989) SILICON WAVEGUIDES WINDOWS
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