High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows

High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows

Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were obt...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1986-12, Vol.49 (23), p.1572-1574
Hauptverfasser: THORNTON, R. L, WELCH, D. F, BURNHAM, R. D, PAOLI, T. L, CROSS, P. S
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
DATA
DESIGN
EFFICIENCY
ELEMENTS
ENGINEERING
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
Fundamental areas of phenomenology (including applications)
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
INFORMATION
LASERS
NUMERICAL DATA
OPENINGS
Optics
Physics
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SEMIMETALS 420300 > Engineering-- Lasers-- (-1989)
SILICON
WAVEGUIDES
WINDOWS
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Zusammenfassung:Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were obtained for a device with a coated output facet. Evidence is presented that the window region formed by silicon diffusion is a low-loss waveguide which confines the propagating wave, increasing the efficiency of the device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97283