High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows
Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were obt...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1986-12, Vol.49 (23), p.1572-1574 |
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| container_end_page | 1574 |
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| container_issue | 23 |
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| container_title | Appl. Phys. Lett.; (United States) |
| container_volume | 49 |
| creator | THORNTON, R. L WELCH, D. F BURNHAM, R. D PAOLI, T. L CROSS, P. S |
| description | Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were obtained for a device with a coated output facet. Evidence is presented that the window region formed by silicon diffusion is a low-loss waveguide which confines the propagating wave, increasing the efficiency of the device. |
| doi_str_mv | 10.1063/1.97283 |
| format | Article |
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L ; WELCH, D. F ; BURNHAM, R. D ; PAOLI, T. L ; CROSS, P. S</creator><creatorcontrib>THORNTON, R. L ; WELCH, D. F ; BURNHAM, R. D ; PAOLI, T. L ; CROSS, P. S ; Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304</creatorcontrib><description>Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were obtained for a device with a coated output facet. Evidence is presented that the window region formed by silicon diffusion is a low-loss waveguide which confines the propagating wave, increasing the efficiency of the device.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.97283</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>ALUMINIUM ARSENIDES ; ALUMINIUM COMPOUNDS ; ARSENIC COMPOUNDS ; ARSENIDES ; COATINGS ; DATA ; DESIGN ; EFFICIENCY ; ELEMENTS ; ENGINEERING ; Exact sciences and technology ; EXPERIMENTAL DATA ; FABRICATION ; Fundamental areas of phenomenology (including applications) ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; IMPURITIES ; INFORMATION ; LASERS ; NUMERICAL DATA ; OPENINGS ; Optics ; Physics ; PNICTIDES ; POWER ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR LASERS ; Semiconductor lasers; laser diodes ; SEMIMETALS 420300 -- Engineering-- Lasers-- (-1989) ; SILICON ; WAVEGUIDES ; WINDOWS</subject><ispartof>Appl. Phys. Lett.; (United States), 1986-12, Vol.49 (23), p.1572-1574</ispartof><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c310t-ddb723c6f23b43195182b62034d254572789910624b0472e4543067f1467184a3</citedby><cites>FETCH-LOGICAL-c310t-ddb723c6f23b43195182b62034d254572789910624b0472e4543067f1467184a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8293316$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/7222098$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>THORNTON, R. L</creatorcontrib><creatorcontrib>WELCH, D. F</creatorcontrib><creatorcontrib>BURNHAM, R. D</creatorcontrib><creatorcontrib>PAOLI, T. L</creatorcontrib><creatorcontrib>CROSS, P. S</creatorcontrib><creatorcontrib>Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304</creatorcontrib><title>High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows</title><title>Appl. Phys. Lett.; (United States)</title><description>Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were obtained for a device with a coated output facet. Evidence is presented that the window region formed by silicon diffusion is a low-loss waveguide which confines the propagating wave, increasing the efficiency of the device.</description><subject>ALUMINIUM ARSENIDES</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>COATINGS</subject><subject>DATA</subject><subject>DESIGN</subject><subject>EFFICIENCY</subject><subject>ELEMENTS</subject><subject>ENGINEERING</subject><subject>Exact sciences and technology</subject><subject>EXPERIMENTAL DATA</subject><subject>FABRICATION</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>IMPURITIES</subject><subject>INFORMATION</subject><subject>LASERS</subject><subject>NUMERICAL DATA</subject><subject>OPENINGS</subject><subject>Optics</subject><subject>Physics</subject><subject>PNICTIDES</subject><subject>POWER</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR LASERS</subject><subject>Semiconductor lasers; laser diodes</subject><subject>SEMIMETALS 420300 -- Engineering-- Lasers-- (-1989)</subject><subject>SILICON</subject><subject>WAVEGUIDES</subject><subject>WINDOWS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNo9kF1LwzAYhYMoOKf4F4KIHxed-WrTXo6hThiIqHgZ0jR1ka6peTPG_r3RDa8OL-fh8J6D0DklE0oKfkcnlWQlP0AjSqTMOKXlIRoRQnhWVDk9RicAX-nMGecj9DJ3n0s8-I0N-IZNKP64xZRkEIMbLJ52j3oKuNOQbB2C3gLeuLjErw43DnxobLANbrWxMRl94zdwio5a3YE92-sYvT_cv83m2eL58Wk2XWSGUxKzpqkl46ZoGa8Fp-mzktUFI1w0LBe5ZLKsqlSIiZoIyazIBSeFbKkoJC2F5mN0scv1EJ0C46I1S-P73pqoJGOMVGWCrnbQEPz32kJUKwfGdp3urV-DYoJIIohI4PUONMEDBNuqIbiVDltFifrdVVH1t2siL_eRGozu2qB74-AfL1nFOS34D9u9cTI</recordid><startdate>19861208</startdate><enddate>19861208</enddate><creator>THORNTON, R. L</creator><creator>WELCH, D. F</creator><creator>BURNHAM, R. D</creator><creator>PAOLI, T. L</creator><creator>CROSS, P. S</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19861208</creationdate><title>High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows</title><author>THORNTON, R. L ; WELCH, D. F ; BURNHAM, R. D ; PAOLI, T. L ; CROSS, P. S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c310t-ddb723c6f23b43195182b62034d254572789910624b0472e4543067f1467184a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>ALUMINIUM ARSENIDES</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>COATINGS</topic><topic>DATA</topic><topic>DESIGN</topic><topic>EFFICIENCY</topic><topic>ELEMENTS</topic><topic>ENGINEERING</topic><topic>Exact sciences and technology</topic><topic>EXPERIMENTAL DATA</topic><topic>FABRICATION</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>IMPURITIES</topic><topic>INFORMATION</topic><topic>LASERS</topic><topic>NUMERICAL DATA</topic><topic>OPENINGS</topic><topic>Optics</topic><topic>Physics</topic><topic>PNICTIDES</topic><topic>POWER</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR LASERS</topic><topic>Semiconductor lasers; laser diodes</topic><topic>SEMIMETALS 420300 -- Engineering-- Lasers-- (-1989)</topic><topic>SILICON</topic><topic>WAVEGUIDES</topic><topic>WINDOWS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>THORNTON, R. L</creatorcontrib><creatorcontrib>WELCH, D. F</creatorcontrib><creatorcontrib>BURNHAM, R. D</creatorcontrib><creatorcontrib>PAOLI, T. L</creatorcontrib><creatorcontrib>CROSS, P. S</creatorcontrib><creatorcontrib>Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>THORNTON, R. L</au><au>WELCH, D. F</au><au>BURNHAM, R. D</au><au>PAOLI, T. L</au><au>CROSS, P. S</au><aucorp>Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1986-12-08</date><risdate>1986</risdate><volume>49</volume><issue>23</issue><spage>1572</spage><epage>1574</epage><pages>1572-1574</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were obtained for a device with a coated output facet. Evidence is presented that the window region formed by silicon diffusion is a low-loss waveguide which confines the propagating wave, increasing the efficiency of the device.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.97283</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1986-12, Vol.49 (23), p.1572-1574 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES COATINGS DATA DESIGN EFFICIENCY ELEMENTS ENGINEERING Exact sciences and technology EXPERIMENTAL DATA FABRICATION Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS IMPURITIES INFORMATION LASERS NUMERICAL DATA OPENINGS Optics Physics PNICTIDES POWER SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes SEMIMETALS 420300 -- Engineering-- Lasers-- (-1989) SILICON WAVEGUIDES WINDOWS |
| title | High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows |
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