Frequency response of an InGaAsP vapor phase regrown buried heterostructure laser with 18 GHz bandwidth

The frequency response of a 1.3-μm InGaAsP vapor phase regrown buried heterostructure laser with an 18-GHz cw bandwidth is analyzed in detail. The intrinsic bandwidth of the device is shown to be 22 GHz and the 3-dB RC roll-off frequency due to electrical parasitics is found to be 10 GHz.

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Bibliographische Detailangaben
Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1986-07, Vol.49 (3), p.128-130
Hauptverfasser:	OLSHANSKY, R, LANZISERA, V, SU, C. B, POWAZINIK, W, LAUER, R. B
Format:	Artikel
Sprache:	eng
Schlagworte:	ELECTRICAL PROPERTIES ENGINEERING EPITAXY Exact sciences and technology FABRICATION FREQUENCY RANGE FREQUENCY RESPONSE TESTING Fundamental areas of phenomenology (including applications) GHZ RANGE GHZ RANGE 01-100 LASERS OPERATION Optics PHYSICAL PROPERTIES Physics SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers laser diodes TESTING 420300 > Engineering-- Lasers-- (-1989) VAPOR PHASE EPITAXY
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Beschreibung
Zusammenfassung:	The frequency response of a 1.3-μm InGaAsP vapor phase regrown buried heterostructure laser with an 18-GHz cw bandwidth is analyzed in detail. The intrinsic bandwidth of the device is shown to be 22 GHz and the 3-dB RC roll-off frequency due to electrical parasitics is found to be 10 GHz.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.97620