High-Temperature-Annealed Flexible Carbon Nanotube Network Transistors for High-Frequency Wearable Wireless Electronics

Semiconducting single-walled carbon nanotubes (SWNTs) are potential active materials for fast-growing flexible/wearable applications with low-power dissipation, especially suitable for increasingly important radio-frequency (RF) wireless biosensor systems. However, the operation frequency of the existing flexible carbon nanotube field-effect transistors (CNT-FETs) is far below the current state-of-the-art GSM spectrum frequency band (typical 850 MHz) for near-field wireless communication applications. In this paper, we successfully conduct a 900 °C annealing process for the flexible CNT-FETs and hence significantly improve their operation frequency up to 2.1 gigahertz (GHz), making it possible to cover the current GSM spectra for integrated wireless sensor systems. The high-temperature annealing process significantly improves the electrical characteristic of the flexible CNT-FETs by removing the surfactant impurities of the SWNT materials. The obtained flexible CNT-FETs exhibit record transconductance ( ) as high as 48 μS/μm. Despite an applied strain level of 2%, a characteristic frequency of over 1 GHz is observed. Further demonstration of GHz performance is also exhibited for flexible RF integrated circuits (ICs) such as frequency multipliers and mixers, which are the fundamental components for wireless applications. This work offers a new pathway for realizing SWNT-based wearable wireless GHz sensor systems with power efficiency.