Enhanced Photoinduced Carrier Generation Efficiency through Surface Band Bending in Topological Insulator Bi2Se3 Thin Films by the Oxidized Layer

Enhanced Photoinduced Carrier Generation Efficiency through Surface Band Bending in Topological Insulator Bi2Se3 Thin Films by the Oxidized Layer

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Veröffentlicht in:ACS applied materials & interfaces 2020-06, Vol.12 (23), p.26649-26658
Hauptverfasser: Hong, Seok-Bo, Kim, Dae-Kyoung, Chae, Jimin, Kim, Kiwoong, Jeong, Kwangsik, Kim, Jonghoon, Park, Hanbum, Yi, Yeonjin, Cho, Mann-Ho
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container_end_page 26658
container_issue 23
container_start_page 26649
container_title ACS applied materials & interfaces
container_volume 12
creator Hong, Seok-Bo
Kim, Dae-Kyoung
Chae, Jimin
Kim, Kiwoong
Jeong, Kwangsik
Kim, Jonghoon
Park, Hanbum
Yi, Yeonjin
Cho, Mann-Ho
description
doi_str_mv 10.1021/acsami.0c05165
format Article
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title Enhanced Photoinduced Carrier Generation Efficiency through Surface Band Bending in Topological Insulator Bi2Se3 Thin Films by the Oxidized Layer
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