Cost-Effective High-Performance Monolithic X-Band Low-Noise Amplifiers
A low-cost, high-performance X-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and a standard deviation of 0.1 dB, wit...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1986-12, Vol.34 (12), p.1553-1558 |
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| container_end_page | 1558 |
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| container_issue | 12 |
| container_start_page | 1553 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 34 |
| creator | Wang, D.C. Pauley, R.G. Shing-Kuo Wang Liu, L.C.T. |
| description | A low-cost, high-performance X-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and a standard deviation of 0.1 dB, with an associated gain of 22.5 dB and a standard deviation of 0.8 dB at the center frequency band of 9.5 GHz, have been measured. |
| doi_str_mv | 10.1109/TMTT.1986.1133578 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_24007548</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1133578</ieee_id><sourcerecordid>24007548</sourcerecordid><originalsourceid>FETCH-LOGICAL-c308t-8b4577dbd35b8c1a61bb322bbdcf65e7110055c6c9a1cb293513f44482098dee3</originalsourceid><addsrcrecordid>eNqFkEFLwzAYhoMoOKc_QLz0IN4ykyZp0-McmxM29VDBW0nTLy7SNjPpFP-9HSt69PTxwvO-8D0IXVIyoZRkt_k6zyc0k0kfGROpPEIjKkSKsyQlx2hECJU445KcorMQ3vvIBZEjtJi50OG5MaA7-wnR0r5t8DN443yjWg3R2rWutt3G6ugV36m2ilbuCz86GyCaNtvaGgs-nKMTo-oAF8Mdo5fFPJ8t8erp_mE2XWHNiOywLLlI06qsmCilpiqhZcniuCwrbRIBaf8KEUInOlNUl3HGBGWGcy5jkskKgI3RzWF3693HDkJXNDZoqGvVgtuFIpZx_5fg_4OckFRw2YP0AGrvQvBgiq23jfLfBSXFXm2xV1vs1RaD2r5zPYyroFVtfG_Kht-ipCnNqOixqwNmAeBvdhj5ASxrgME</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24007548</pqid></control><display><type>article</type><title>Cost-Effective High-Performance Monolithic X-Band Low-Noise Amplifiers</title><source>IEEE Electronic Library (IEL)</source><creator>Wang, D.C. ; Pauley, R.G. ; Shing-Kuo Wang ; Liu, L.C.T.</creator><creatorcontrib>Wang, D.C. ; Pauley, R.G. ; Shing-Kuo Wang ; Liu, L.C.T.</creatorcontrib><description>A low-cost, high-performance X-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and a standard deviation of 0.1 dB, with an associated gain of 22.5 dB and a standard deviation of 0.8 dB at the center frequency band of 9.5 GHz, have been measured.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.1986.1133578</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Circuit properties ; Circuit synthesis ; Conducting materials ; Costs ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; FETs ; Gallium arsenide ; Low-noise amplifiers ; Measurement standards ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; MMICs ; Noise figure ; Radar antennas</subject><ispartof>IEEE transactions on microwave theory and techniques, 1986-12, Vol.34 (12), p.1553-1558</ispartof><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c308t-8b4577dbd35b8c1a61bb322bbdcf65e7110055c6c9a1cb293513f44482098dee3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1133578$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,778,782,787,788,794,23913,23914,25123,27907,27908,54741</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1133578$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8171915$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wang, D.C.</creatorcontrib><creatorcontrib>Pauley, R.G.</creatorcontrib><creatorcontrib>Shing-Kuo Wang</creatorcontrib><creatorcontrib>Liu, L.C.T.</creatorcontrib><title>Cost-Effective High-Performance Monolithic X-Band Low-Noise Amplifiers</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>A low-cost, high-performance X-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and a standard deviation of 0.1 dB, with an associated gain of 22.5 dB and a standard deviation of 0.8 dB at the center frequency band of 9.5 GHz, have been measured.</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Circuit synthesis</subject><subject>Conducting materials</subject><subject>Costs</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Gallium arsenide</subject><subject>Low-noise amplifiers</subject><subject>Measurement standards</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>MMICs</subject><subject>Noise figure</subject><subject>Radar antennas</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNqFkEFLwzAYhoMoOKc_QLz0IN4ykyZp0-McmxM29VDBW0nTLy7SNjPpFP-9HSt69PTxwvO-8D0IXVIyoZRkt_k6zyc0k0kfGROpPEIjKkSKsyQlx2hECJU445KcorMQ3vvIBZEjtJi50OG5MaA7-wnR0r5t8DN443yjWg3R2rWutt3G6ugV36m2ilbuCz86GyCaNtvaGgs-nKMTo-oAF8Mdo5fFPJ8t8erp_mE2XWHNiOywLLlI06qsmCilpiqhZcniuCwrbRIBaf8KEUInOlNUl3HGBGWGcy5jkskKgI3RzWF3693HDkJXNDZoqGvVgtuFIpZx_5fg_4OckFRw2YP0AGrvQvBgiq23jfLfBSXFXm2xV1vs1RaD2r5zPYyroFVtfG_Kht-ipCnNqOixqwNmAeBvdhj5ASxrgME</recordid><startdate>19861201</startdate><enddate>19861201</enddate><creator>Wang, D.C.</creator><creator>Pauley, R.G.</creator><creator>Shing-Kuo Wang</creator><creator>Liu, L.C.T.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19861201</creationdate><title>Cost-Effective High-Performance Monolithic X-Band Low-Noise Amplifiers</title><author>Wang, D.C. ; Pauley, R.G. ; Shing-Kuo Wang ; Liu, L.C.T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c308t-8b4577dbd35b8c1a61bb322bbdcf65e7110055c6c9a1cb293513f44482098dee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Circuit synthesis</topic><topic>Conducting materials</topic><topic>Costs</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>Gallium arsenide</topic><topic>Low-noise amplifiers</topic><topic>Measurement standards</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>MMICs</topic><topic>Noise figure</topic><topic>Radar antennas</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, D.C.</creatorcontrib><creatorcontrib>Pauley, R.G.</creatorcontrib><creatorcontrib>Shing-Kuo Wang</creatorcontrib><creatorcontrib>Liu, L.C.T.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, D.C.</au><au>Pauley, R.G.</au><au>Shing-Kuo Wang</au><au>Liu, L.C.T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cost-Effective High-Performance Monolithic X-Band Low-Noise Amplifiers</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1986-12-01</date><risdate>1986</risdate><volume>34</volume><issue>12</issue><spage>1553</spage><epage>1558</epage><pages>1553-1558</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A low-cost, high-performance X-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and a standard deviation of 0.1 dB, with an associated gain of 22.5 dB and a standard deviation of 0.8 dB at the center frequency band of 9.5 GHz, have been measured.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.1986.1133578</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 1986-12, Vol.34 (12), p.1553-1558 |
| issn | 0018-9480 1557-9670 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_24007548 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Circuit properties Circuit synthesis Conducting materials Costs Electric, optical and optoelectronic circuits Electronics Exact sciences and technology FETs Gallium arsenide Low-noise amplifiers Measurement standards Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits MMICs Noise figure Radar antennas |
| title | Cost-Effective High-Performance Monolithic X-Band Low-Noise Amplifiers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T08%3A45%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Cost-Effective%20High-Performance%20Monolithic%20X-Band%20Low-Noise%20Amplifiers&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Wang,%20D.C.&rft.date=1986-12-01&rft.volume=34&rft.issue=12&rft.spage=1553&rft.epage=1558&rft.pages=1553-1558&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.1986.1133578&rft_dat=%3Cproquest_RIE%3E24007548%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=24007548&rft_id=info:pmid/&rft_ieee_id=1133578&rfr_iscdi=true |