Cost-Effective High-Performance Monolithic X-Band Low-Noise Amplifiers

A low-cost, high-performance X-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and a standard deviation of 0.1 dB, wit...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 1986-12, Vol.34 (12), p.1553-1558
Hauptverfasser:	Wang, D.C., Pauley, R.G., Shing-Kuo Wang, Liu, L.C.T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Circuit synthesis Conducting materials Costs Electric, optical and optoelectronic circuits Electronics Exact sciences and technology FETs Gallium arsenide Low-noise amplifiers Measurement standards Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits MMICs Noise figure Radar antennas
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Beschreibung
Zusammenfassung:	A low-cost, high-performance X-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches have been evaluated in terms of yield, cost, and device performance. An average noise figure of 2.2 dB and a standard deviation of 0.1 dB, with an associated gain of 22.5 dB and a standard deviation of 0.8 dB at the center frequency band of 9.5 GHz, have been measured.
ISSN:	0018-9480 1557-9670
DOI:	10.1109/TMTT.1986.1133578