X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages

Soft X-ray (∼10 keV) and near ultra-violet radiation based technique for precise adjustment of MOS devices and integrated circuit thresholds has been developed. The possibility of the parameter adjustment is based on the radiation controlled formation of thermally-and-field stable charge in the phosphorus impurity contained gate oxides. Results of implementation of the ionizing radiation-based technique in the full-scale production of commercial MOS VLSI circuits are summarized.