Contact resistance measurements for hydrogenated amorphous silicon solar cell structures

A technique for measuring the electrical characteristics of contacts to doped hydrogenated amorphous silicon (a-Si:H) or other high-resistivity thin-film semiconductors is developed. Experimental results for metal and conductive transparent oxide contacts to both n- and p-type a-Si:H are presented a...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1986-03, Vol.59 (5), p.1682-1687
Hauptverfasser:	SCHADE, H, SMITH, Z. E
Format:	Artikel
Sprache:	eng
Schlagworte:	140501 - Solar Energy Conversion- Photovoltaic Conversion 420800 - Engineering- Electronic Circuits & Devices- (-1989) Applied sciences CHALCOGENIDES DATA DIRECT ENERGY CONVERTERS ELECTRIC CONDUCTIVITY ELECTRIC CONTACTS ELECTRICAL EQUIPMENT ELECTRICAL PROPERTIES Energy ENGINEERING Exact sciences and technology EXPERIMENTAL DATA INFORMATION MEASURING METHODS Natural energy NUMERICAL DATA OXIDES OXYGEN COMPOUNDS PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS PHYSICAL PROPERTIES SILICON SOLAR CELLS SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT Solar thermal conversion SURFACE PROPERTIES
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Beschreibung
Zusammenfassung:	A technique for measuring the electrical characteristics of contacts to doped hydrogenated amorphous silicon (a-Si:H) or other high-resistivity thin-film semiconductors is developed. Experimental results for metal and conductive transparent oxide contacts to both n- and p-type a-Si:H are presented and the significance of these values to solar cell applications discussed.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.336431