Vapour growth and characterization of Mo0.5W0.5Se2 single crystals

Vapour growth and characterization of Mo0.5W0.5Se2 single crystals

The growth of Mo0.5W0.5Se2 single crystals of max. size 17 x 11 x 0.2 mm by physical vapour transport is described. The growth conditions are described and measurements of the lattice parameters presented. Electrical resistivity decreases linearly with 1/T according to an activation energy of 0.1 eV...

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Veröffentlicht in:Journal of crystal growth 1980-08, Vol.49 (4), p.693-695
Hauptverfasser: Agarwal, M.K., Wani, P.A., Patel, P.D.
Format: Artikel
Sprache:eng
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Zusammenfassung:The growth of Mo0.5W0.5Se2 single crystals of max. size 17 x 11 x 0.2 mm by physical vapour transport is described. The growth conditions are described and measurements of the lattice parameters presented. Electrical resistivity decreases linearly with 1/T according to an activation energy of 0.1 eV. The sign and magnitude of the Hall coeff. indicates a p-type semiconductor with a carrier density of 3.3 x 1016/cm3.--R.E.
ISSN:0022-0248
DOI:10.1016/0022-0248(80)90296-1