Transverse mode stabilized AlGaAs/GaAs plano-convex waveguide laser made by a single-step liquid phase epitaxy

A new laser structure, the plano-convex waveguide (PCW) laser is described. A thickness-varied waveguide layer used for transverse mode stabilization was formed adjacent to the planar active layer. The laser structure was fabricated by a single-step liquid phase epitaxial growth on a grooved substrate. With pulsed injection, stable fundamental transverse mode operation was observed up to 3.5 times threshold current, where power output was 36 mW/facet. At zero dc bias, single longitudinal mode was attained after 10 ns of the leading edge of the optical pulse. Far-field beam divergences of about 10° and 50° were obtained in directions parallel and perpendicular to the junction plane, respectively.