The influence of high uniaxial stress on the Γ I, C conduction band effective mass of gallium arsenide

From a study of the Zeeman splitting of the shallow donor states, the variation of the effective mass in the Γ IC conduction band minimum of gallium arsenide has been measured as a function of applied uniaxial stress. The effective mass is found to be proportional to the stress, the percentage increase being (0.23 ± 0.06), (0.115 ± 0.015) and (0.075 ± 0.015) kbar −1 for 〈100〉, 〈110〉 and 〈111〉 stress respectively. The precision inherent in the far-infrared technique employed is greater than that of previous experimental methods.