The metal–semiconductor contact

Models for the potential barrier (Schottky barrier) at a metal--semiconductor interface are briefly reviewed: early models based on work functions, the later development of the surface state concept, and finally the recent work on the mechanism of barrier formation in compound semiconductors.--T.W.

Bibliographische Detailangaben

Veröffentlicht in:	Nature (London) 1980-04, Vol.284 (5755), p.403-404
1. Verfasser:	Northrop, D.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Humanities and Social Sciences multidisciplinary news-and-views Science Science (multidisciplinary)
Online-Zugang:	Volltext
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