The metal–semiconductor contact

The metal–semiconductor contact

Models for the potential barrier (Schottky barrier) at a metal--semiconductor interface are briefly reviewed: early models based on work functions, the later development of the surface state concept, and finally the recent work on the mechanism of barrier formation in compound semiconductors.--T.W.

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Veröffentlicht in:Nature (London) 1980-04, Vol.284 (5755), p.403-404
1. Verfasser: Northrop, D.C.
Format: Artikel
Sprache:eng
Schlagworte:
Humanities and Social Sciences
multidisciplinary
news-and-views
Science
Science (multidisciplinary)
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Zusammenfassung:Models for the potential barrier (Schottky barrier) at a metal--semiconductor interface are briefly reviewed: early models based on work functions, the later development of the surface state concept, and finally the recent work on the mechanism of barrier formation in compound semiconductors.--T.W.
ISSN:0028-0836
1476-4687
DOI:10.1038/284403a0