Estimation of hot photoelectron density in polar semiconductors
The fraction of laser excitation energy transferred to the electron gas is calculated for polar semiconductors in case of both monoenergetic and transit electrons involved into heating up the gas. The expressions obtained are used for the estimation of photoelectron density in ZnSe single crystals a...
Gespeichert in:
| Veröffentlicht in: | Solid state communications 1981-01, Vol.39 (8), p.889-891 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The fraction of laser excitation energy transferred to the electron gas is calculated for polar semiconductors in case of both monoenergetic and transit electrons involved into heating up the gas. The expressions obtained are used for the estimation of photoelectron density in ZnSe single crystals at 4.2K. The result is in good agreement with the data on photoelectron effective temperature saturation. |
|---|---|
| ISSN: | 0038-1098 1879-2766 |
| DOI: | 10.1016/0038-1098(81)90031-4 |