Stress distributions in silicon crystal substrates with thin films

The three-dimensional stress distributions in a substrate due to a rectangular film deposited on the substrate are calculated by linear elastic theory on the assumption of a concentrated force at the film edge. Furthermore, on the basis of the results, resolved shear stress distributions in a (001) silicon crystal substrate are calculated to evaluate the character of the dislocations generated at the film edge. These calculated results are compared to experimental ones obtained in a sample of a (001) silicon substrate with a 3×3-mm-square pattern of Si3N4 film. The results show that the glide planes and Burgers vectors of the dislocations generated at the film edge can be determined by a simple rule.