Avoiding dislocations in ion-implanted silicon
Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desirable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criter...
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| Veröffentlicht in: | ESSDERC '92: 22nd European Solid State Device Research conference 1992, Vol.19 (1), p.357-362 |
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| container_title | ESSDERC '92: 22nd European Solid State Device Research conference |
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| creator | Saris, F.W. Custer, J.S. Schreutelkamp, R.J. Liefting, R.J. Wijburg, R. Wallinga, H. |
| description | Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desirable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications. |
| doi_str_mv | 10.1016/0167-9317(92)90453-X |
| format | Article |
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Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications.</description><subject>Atomic measurements</subject><subject>Implants</subject><subject>Impurities</subject><subject>Ion implantation</subject><subject>Microelectronics</subject><subject>Physics</subject><subject>Rapid thermal annealing</subject><subject>Silicon</subject><subject>Thermal degradation</subject><subject>Thermal engineering</subject><issn>0167-9317</issn><issn>1873-5568</issn><isbn>9780444894786</isbn><isbn>0444894780</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9UE1Lw0AQXfwAa-0v0ENOoofU2a9k9yKU4hcUvCj0tiSbiawk2ZpNC_57t0Z69DAMM_PeY94j5IrCnALN7mLlqeY0v9HsVoOQPF0fkQlVOU-lzNQxmelcgRBCaZGr7IRMDpQzch7CJ8RZgJqQ-WLnXeW6j6RyofG2GJzvQuK6JPbUtZum6AaskuAaZ313QU7rogk4--tT8v748LZ8TlevTy_LxSq1IqdDSqUWFkBzVtgSFShd1kozwbAAJRVwxZBJKGqIO8lAK6wReSkUaM2h5FNyPepuev-1xTCY1gWLTfwG_TYYxpXMMqYjUIxA2_sQeqzNpndt0X8bCmYfltk7N3vnRjPzG5ZZR9rlSHOIeKBIwSWlebzej1eMFncOexOsw85i5Xq0g6m8-1_-B0KRdXw</recordid><startdate>1992</startdate><enddate>1992</enddate><creator>Saris, F.W.</creator><creator>Custer, J.S.</creator><creator>Schreutelkamp, R.J.</creator><creator>Liefting, R.J.</creator><creator>Wijburg, R.</creator><creator>Wallinga, H.</creator><general>Elsevier B.V</general><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>1992</creationdate><title>Avoiding dislocations in ion-implanted silicon</title><author>Saris, F.W. ; Custer, J.S. ; Schreutelkamp, R.J. ; Liefting, R.J. ; Wijburg, R. ; Wallinga, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c471t-1594c00932acbe8089bf89242ea08580382e250af024252098efee3b4809930b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Atomic measurements</topic><topic>Implants</topic><topic>Impurities</topic><topic>Ion implantation</topic><topic>Microelectronics</topic><topic>Physics</topic><topic>Rapid thermal annealing</topic><topic>Silicon</topic><topic>Thermal degradation</topic><topic>Thermal engineering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Saris, F.W.</creatorcontrib><creatorcontrib>Custer, J.S.</creatorcontrib><creatorcontrib>Schreutelkamp, R.J.</creatorcontrib><creatorcontrib>Liefting, R.J.</creatorcontrib><creatorcontrib>Wijburg, R.</creatorcontrib><creatorcontrib>Wallinga, H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>ESSDERC '92: 22nd European Solid State Device Research conference</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Saris, F.W.</au><au>Custer, J.S.</au><au>Schreutelkamp, R.J.</au><au>Liefting, R.J.</au><au>Wijburg, R.</au><au>Wallinga, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Avoiding dislocations in ion-implanted silicon</atitle><jtitle>ESSDERC '92: 22nd European Solid State Device Research conference</jtitle><stitle>ESSDERC</stitle><date>1992</date><risdate>1992</risdate><volume>19</volume><issue>1</issue><spage>357</spage><epage>362</epage><pages>357-362</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><isbn>9780444894786</isbn><isbn>0444894780</isbn><abstract>Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. 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| identifier | ISSN: 0167-9317 |
| ispartof | ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.357-362 |
| issn | 0167-9317 1873-5568 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Atomic measurements Implants Impurities Ion implantation Microelectronics Physics Rapid thermal annealing Silicon Thermal degradation Thermal engineering |
| title | Avoiding dislocations in ion-implanted silicon |
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