Avoiding dislocations in ion-implanted silicon

Avoiding dislocations in ion-implanted silicon

Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desirable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criter...

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Veröffentlicht in:ESSDERC '92: 22nd European Solid State Device Research conference 1992, Vol.19 (1), p.357-362
Hauptverfasser: Saris, F.W., Custer, J.S., Schreutelkamp, R.J., Liefting, R.J., Wijburg, R., Wallinga, H.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic measurements
Implants
Impurities
Ion implantation
Microelectronics
Physics
Rapid thermal annealing
Silicon
Thermal degradation
Thermal engineering
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Zusammenfassung:Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desirable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(92)90453-X