Silicon amorphization by ion beam with radiation heating

A study is made of the depth distribution of the amorphous phase and paramagnetic centers in silicon bombarded by P+ and Ar+ ions with energy E = 40 to 50 keV, average current densities j̄ = 0.2 to 15 μA/cm2, and doses Θ= 1015 to 2 × 1016 ions/cm2. Increase in current density and, hence, in sample t...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1981-06, Vol.65 (2), p.453-461
Hauptverfasser:	Danilin, A. B., Dvurechenskii, A. V., Ryazantsev, I. A., Timofeev, P. A., Verner, V. D.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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