Silicon amorphization by ion beam with radiation heating

A study is made of the depth distribution of the amorphous phase and paramagnetic centers in silicon bombarded by P+ and Ar+ ions with energy E = 40 to 50 keV, average current densities j̄ = 0.2 to 15 μA/cm2, and doses Θ= 1015 to 2 × 1016 ions/cm2. Increase in current density and, hence, in sample temperature, results in a smaller thickness of the amorphous layer. In Si layers bombarded by P+ ions with dose Φ ≧ 5 ± 1015 ions/cm2 the depth distribution profile of paramagnetic centers has a dip in the region 0 < x < Rp whose width increases with j̄. Variations in the depth distribution o f the amorphous phase are calculated using the model of Morehead and Crowder including the dependence of the amorphous cluster radius on the coordinate x along the ion projected range. Assuming the VV‐center‐impurity interaction to obey a diffusion‐controlled mechanism in layers bombarded with P+ ions it is concluded from the theoretical analysis that the diffusion coefficient of phosphorus in the layer is strongly dependent on x. [Russian Text Ignored].